p age:p2-p1 plastic-encapsulate transistors features high voltage transistor marking : 2d maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current -continuous i c 150 ma collector power dissipation p c 0.4 w junction temperature t j 150 storage temperature t stg -55 to +150 thermal resistance, junction to ambient r ? ja 410 ! /mw electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v cbo i c = -100 a, i e =0 -300 v collector-emitter breakdown voltage v ceo i c = -1ma, i b =0 -300 v emitter-base breakdown voltage v ebo i e = -100 a, i c =0 -5 v collector cut-off current i cb o v cb = -20 0v, i e =0 -0.25 a emitter cut-off current i eb o v eb = -5v, i c =0 -0.1 a dc current gain h fe(1) v ce = -10v, i c = -1ma 60 h fe(2) v ce = -10v, i c =-10ma 100 200 h fe(3) v ce = -10v, i c =-30ma 60 collector-emitter saturation voltage v ce (sat) i c =-20ma, i b = -2ma -0.2 v base-emitter saturation voltage v be (sat) i c = -20ma, i b = -2ma -0.9 v transition frequency f t v ce =-20v, i c = -10ma f=30mhz 50 mhz (pnp) 1. base 2. emitter sot-23 3. collecto MMBTA92 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
page:p2-p2 plastic-encapsulate transistors typical characteristics MMBTA92 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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